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Epitaxy of highly ordered organic semiconductor crystallite networks supported by hexagonal boron nitride

This study focuses on hexagonal boron nitride as an ultra-thin van der Waals dielectric substrate for the epitaxial growth of highly ordered crystalline networks of the organic semiconductor parahexaphenyl. Atomic force microscopy based morphology analysis combined with density functional theory sim...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Sci Rep
Päätekijät: Matković, Aleksandar, Genser, Jakob, Lüftner, Daniel, Kratzer, Markus, Gajić, Radoš, Puschnig, Peter, Teichert, Christian
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Nature Publishing Group 2016
Aiheet:
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC5143978/
https://ncbi.nlm.nih.gov/pubmed/27929042
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep38519
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