Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)

Novel, P‐doped, flexible SiC field emitters, with both low turn‐on fields and extremely high current emission stability are demonstrated by W. Y. Yang, X. S. Fang, and co‐workers in article number 1500256. The high stability under high temperatures and extreme bending conditions opens up practical a...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Adv Sci (Weinh)
Päätekijät: Chen, Shanliang, Shang, Minghui, Gao, Fengmei, Wang, Lin, Ying, Pengzhan, Yang, Weiyou, Fang, Xiaosheng
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: John Wiley and Sons Inc. 2016
Aiheet:
Inside Front Cover
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC5115500/
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201670002
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