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Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes
Realistic integration of 1D materials into future nanodevices is limited by the lack of a manipulation process that allows a large number of nanowires to be arranged into an integrated circuit. In this work, we have grown Si nanowire bridges using a thin-film catalyst in a batch process at 200 °C an...
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| Pubblicato in: | Sci Technol Adv Mater |
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| Autori principali: | , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Taylor & Francis
2011
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5090679/ https://ncbi.nlm.nih.gov/pubmed/27877464 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1088/1468-6996/12/6/065004 |
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