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Versatile sputtering technology for Al(2)O(3) gate insulators on graphene
We report a novel, sputtering-based fabrication method of Al(2)O(3) gate insulators on graphene. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al(2)O(3) layers possess comparable quality to oxides obtained by atomic layer deposition with r...
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| Publicado no: | Sci Technol Adv Mater |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Taylor & Francis
2012
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5090635/ https://ncbi.nlm.nih.gov/pubmed/27877485 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1088/1468-6996/13/2/025007 |
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