Recent progress in GeSi electro-absorption modulators

Electro-absorption from GeSi heterostructures is receiving growing attention as a high performance optical modulator for short distance optical interconnects. Ge incorporation with Si allows strong modulation mechanism using the Franz–Keldysh effect and the quantum-confined Stark effect from bulk an...

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Dades bibliogràfiques
Publicat a:Sci Technol Adv Mater
Autors principals: Chaisakul, Papichaya, Marris-Morini, Delphine, Rouifed, Mohamed-Said, Frigerio, Jacopo, Chrastina, Daniel, Coudevylle, Jean-René, Roux, Xavier Le, Edmond, Samson, Isella, Giovanni, Vivien, Laurent
Format: Artigo
Idioma:Inglês
Publicat: Taylor & Francis 2013
Matèries:
Focus on Silicon Photonics
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC5090600/
https://ncbi.nlm.nih.gov/pubmed/27877639
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1088/1468-6996/15/1/014601
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