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Electrically tunable sign of capacitance in planar W-doped vanadium dioxide micro-switches
Negative capacitance (NC) in a planar W-doped VO(2) micro-switch was observed at room temperature in the low-frequency range 1 kHz–10 MHz. The capacitance changed from positive to negative values as the W-doped VO(2) active layer switched from semiconducting to metallic state under applied voltage....
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| Veröffentlicht in: | Sci Technol Adv Mater |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Taylor & Francis
2011
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5090499/ https://ncbi.nlm.nih.gov/pubmed/27877421 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1088/1468-6996/12/4/045002 |
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