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Two Dimensional Electrostrictive Field Effect Transistor (2D-EFET): A sub-60mV/decade Steep Slope Device with High ON current
This article proposes a disruptive device concept which meets both low power and high performance criterion for post-CMOS computing and at the same time enables aggressive channel length scaling. This device, hereafter refer to as two-dimensional electrostrictive field effect transistor or 2D-EFET,...
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| Vydáno v: | Sci Rep |
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| Hlavní autor: | |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2016
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5056397/ https://ncbi.nlm.nih.gov/pubmed/27721489 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep34811 |
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