Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio

Concepts of non-volatile memory to replace conventional flash memory have suffered from low material reliability and high off-state current, and the use of a thick, rigid blocking oxide layer in flash memory further restricts vertical scale-up. Here, we report a two-terminal floating gate memory, tu...

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Vydáno v:Nat Commun
Hlavní autoři: Vu, Quoc An, Shin, Yong Seon, Kim, Young Rae, Nguyen, Van Luan, Kang, Won Tae, Kim, Hyun, Luong, Dinh Hoa, Lee, Il Min, Lee, Kiyoung, Ko, Dong-Su, Heo, Jinseong, Park, Seongjun, Lee, Young Hee, Yu, Woo Jong
Médium: Artigo
Jazyk:Inglês
Vydáno: Nature Publishing Group 2016
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Article
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC5025799/
https://ncbi.nlm.nih.gov/pubmed/27586841
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms12725
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