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Optical thermometry based on level anticrossing in silicon carbide

We report a giant thermal shift of 2.1 MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Al...

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Détails bibliographiques
Publié dans:Sci Rep
Auteurs principaux: Anisimov, A. N., Simin, D., Soltamov, V. A., Lebedev, S. P., Baranov, P. G., Astakhov, G. V., Dyakonov, V.
Format: Artigo
Langue:Inglês
Publié: Nature Publishing Group 2016
Sujets:
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC5022017/
https://ncbi.nlm.nih.gov/pubmed/27624819
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep33301
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