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Dispersion of nonresonant third-order nonlinearities in GeSiSn ternary alloys
Silicon (Si), tin (Sn), and germanium (Ge) alloys have attracted research attention as direct band gap semiconductors with applications in electronics and optoelectronics. In particular, GeSn field effect transistors can exhibit very high performance in terms of power reduction and operating speed b...
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| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2016
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5020741/ https://ncbi.nlm.nih.gov/pubmed/27622979 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep32622 |
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