Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX(2) (X = S, Se and Te)

We present a newtype 2-dimensional (2D) magnetic semiconductor based on transition-metal dichalcogenides VX(2) (X = S, Se and Te) via first-principles calculations. The obtained indirect band gaps of monolayer VS(2), VSe(2), and VTe(2) given from the generalized gradient approximation (GGA) are resp...

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Détails bibliographiques
Publié dans:Sci Rep
Auteurs principaux: Fuh, Huei-Ru, Chang, Ching-Ray, Wang, Yin-Kuo, Evans, Richard F. L., Chantrell, Roy W., Jeng, Horng-Tay
Format: Artigo
Langue:Inglês
Publié: Nature Publishing Group 2016
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Article
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC5013522/
https://ncbi.nlm.nih.gov/pubmed/27601195
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep32625
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