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Performance of arsenene and antimonene double-gate MOSFETs from first principles
In the race towards high-performance ultra-scaled devices, two-dimensional materials offer an alternative paradigm thanks to their atomic thickness suppressing short-channel effects. It is thus urgent to study the most promising candidates in realistic configurations, and here we present detailed mu...
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| Publicado en: | Nat Commun |
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| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5007351/ https://ncbi.nlm.nih.gov/pubmed/27557562 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms12585 |
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