A carregar...
Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics
We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric powe...
Na minha lista:
| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4992857/ https://ncbi.nlm.nih.gov/pubmed/27545201 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep31585 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|