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Temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping

The interactions between thermal phonons and defects are conventionally described as scattering processes, an idea proposed almost a century ago. In this contribution, ab-initio molecular-dynamics simulations provide atomic-level insight into the nature of these interactions. The defect is the Si|X...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Veröffentlicht in:Sci Rep
Hauptverfasser: Bebek, M. B., Stanley, C. M., Gibbons, T. M., Estreicher, S. K.
Format: Artigo
Sprache:Inglês
Veröffentlicht: Nature Publishing Group 2016
Schlagworte:
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4989232/
https://ncbi.nlm.nih.gov/pubmed/27535463
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep32150
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