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Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes
One of the interesing tunneling phenomena is negative differential resistance (NDR), the basic principle of resonant-tunneling diodes. NDR has been utilized in various semiconductor devices such as frequency multipliers, oscillators, relfection amplifiers, logic switches, and memories. The NDR in gr...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4964343/ https://ncbi.nlm.nih.gov/pubmed/27465107 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep30669 |
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