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Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process
The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated as an alternative to the more common metal-catalyzed vapor–liquid–solid process. The well-aligned Si nanowires are successfully grown on a (111)-oriented Si substrate without any metal catalysts by a thermal...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4964331/ https://ncbi.nlm.nih.gov/pubmed/27465800 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep30608 |
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