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High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor
In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffe...
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| Publicat a: | Sensors (Basel) |
|---|---|
| Autors principals: | , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4934265/ https://ncbi.nlm.nih.gov/pubmed/27338381 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s16060839 |
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