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Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part II. Interpreting Oxide-Bias Experiments
The semiconductor device modeling program PC-1D and the programs that support its use in high-accuracy modeling of photodiodes, all of which were described in Part I of this series of papers, are used to simulate oxide-bias self-calibration experiments on three different types of silicon photodiodes...
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| Udgivet i: | J Res Natl Inst Stand Technol |
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| Main Authors: | , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
[Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology
1991
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4930053/ https://ncbi.nlm.nih.gov/pubmed/28184123 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.6028/jres.096.024 |
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