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Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes
The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant. Here, we show that doping and dielectric, two critical featur...
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| Pubblicato in: | Sci Rep |
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| Autori principali: | , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group
2016
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4919786/ https://ncbi.nlm.nih.gov/pubmed/27339272 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep28520 |
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