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Atomic and electronic structure of Lomer dislocations at CdTe bicrystal interface
Extended defects are of considerable importance in determining the electronic properties of semiconductors, especially in photovoltaics (PVs), due to their effects on electron-hole recombination. We employ model systems to study the effects of dislocations in CdTe by constructing grain boundaries us...
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| Vydáno v: | Sci Rep |
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| Hlavní autoři: | , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2016
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4891715/ https://ncbi.nlm.nih.gov/pubmed/27255415 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep27009 |
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