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Polarization induced two dimensional confinement of carriers in wedge shaped polar semiconductors
A novel route to achieve two dimensional (2D) carrier confinement in a wedge shaped wall structure made of a polar semiconductor has been demonstrated theoretically. Tapering of the wall along the direction of the spontaneous polarization leads to the development of charges of equal polarity on the...
Gardado en:
| Publicado en: | Sci Rep |
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| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4876402/ https://ncbi.nlm.nih.gov/pubmed/27210269 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep26429 |
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