A carregar...
Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness
In this paper, a simple and controllable “wet pulse annealing” technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapo...
Na minha lista:
| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4873798/ https://ncbi.nlm.nih.gov/pubmed/27198067 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep26287 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|