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Nanoscale electron transport at the surface of a topological insulator

The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other t...

詳細記述

保存先:
書誌詳細
出版年:Nat Commun
主要な著者: Bauer, Sebastian, Bobisch, Christian A.
フォーマット: Artigo
言語:Inglês
出版事項: Nature Publishing Group 2016
主題:
オンライン・アクセス:https://ncbi.nlm.nih.gov/pmc/articles/PMC4844676/
https://ncbi.nlm.nih.gov/pubmed/27098939
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms11381
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