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Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities
In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. Among all TFETs, those based on one-dimensional (1D) semiconductors exhibit...
Guardat en:
| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4838945/ https://ncbi.nlm.nih.gov/pubmed/27098051 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep24654 |
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