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Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices
Non-radiative recombination (NRR) of excited carriers poses a serious challenge to optoelectronic device efficiency. Understanding the mechanism is thus crucial to defect physics and technological applications. Here, by using first-principles calculations, we propose a new NRR mechanism, where excit...
में बचाया:
| में प्रकाशित: | Sci Rep |
|---|---|
| मुख्य लेखकों: | , , , |
| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Nature Publishing Group
2016
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4830943/ https://ncbi.nlm.nih.gov/pubmed/27075818 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep24404 |
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