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Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors
Tantalum oxide memristors can switch continuously from a low-conductance semiconducting to a high-conductance metallic state. At the boundary between these two regimes are quantized conductance states, which indicate the formation of a point contact within the oxide characterized by multistable cond...
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| Vydáno v: | Nat Commun |
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| Hlavní autoři: | , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2016
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4822004/ https://ncbi.nlm.nih.gov/pubmed/27041485 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms11142 |
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