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Mobility overestimation due to gated contacts in organic field-effect transistors
Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. Howe...
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| Publicado no: | Nat Commun |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4792947/ https://ncbi.nlm.nih.gov/pubmed/26961271 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms10908 |
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