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Direct growth of graphene on SiC(0001) by KrF-excimer-laser irradiation
In this report, we propose a direct patterning method of graphene on the SiC(0001) surface by KrF-excimer-laser irradiation. In this method, Si atoms are locally sublimated from the SiC surface in the laser-irradiated area, and direct graphene growth is induced by the rearrangement of surplus carbon...
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| Publicat a: | Appl Phys Lett |
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| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
AIP Publishing LLC
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4788600/ https://ncbi.nlm.nih.gov/pubmed/27019515 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1063/1.4943142 |
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