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Correlation of p-doping in CVD Graphene with Substrate Surface Charges
Correlations between the level of p-doping exhibited in large area chemical vapour deposition (CVD) graphene field effect transistor structures (gFETs) and residual charges created by a variety of surface treatments to the silicon dioxide (SiO(2)) substrates prior to CVD graphene transfer are measur...
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| Izdano u: | Sci Rep |
|---|---|
| Glavni autori: | , , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Publishing Group
2016
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4783783/ https://ncbi.nlm.nih.gov/pubmed/26956096 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep22858 |
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