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Phosphorus Doping in Si Nanocrystals/SiO(2) msultilayers and Light Emission with Wavelength compatible for Optical Telecommunication
Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior in Si nanocrystals (Si NCs) has not been fully understood so far. In the present work, P-doped Si NCs/SiO(2) multilayers are fabricated. As revealed by XPS and ESR measurements, P do...
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| Veröffentlicht in: | Sci Rep |
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| Hauptverfasser: | , , , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Nature Publishing Group
2016
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4783703/ https://ncbi.nlm.nih.gov/pubmed/26956425 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep22888 |
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