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Bias-polarity-dependent resistance switching in W/SiO(2)/Pt and W/SiO(2)/Si/Pt structures

SiO(2) is the most significantly used insulator layer in semiconductor devices. Its functionality was recently extended to resistance switching random access memory, where the defective SiO(2) played an active role as the resistance switching (RS) layer. In this report, the bias-polarity-dependent R...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Argitaratua izan da:Sci Rep
Egile Nagusiak: Jiang, Hao, Li, Xiang Yuan, Chen, Ran, Shao, Xing Long, Yoon, Jung Ho, Hu, Xiwen, Hwang, Cheol Seong, Zhao, Jinshi
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Nature Publishing Group 2016
Gaiak:
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC4768181/
https://ncbi.nlm.nih.gov/pubmed/26916050
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep22216
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