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Bias-polarity-dependent resistance switching in W/SiO(2)/Pt and W/SiO(2)/Si/Pt structures
SiO(2) is the most significantly used insulator layer in semiconductor devices. Its functionality was recently extended to resistance switching random access memory, where the defective SiO(2) played an active role as the resistance switching (RS) layer. In this report, the bias-polarity-dependent R...
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| 發表在: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , |
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Nature Publishing Group
2016
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| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4768181/ https://ncbi.nlm.nih.gov/pubmed/26916050 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep22216 |
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