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Interface Structure of MoO(3) on Organic Semiconductors
We have systematically studied interface structure formed by vapor-phase deposition of typical transition metal oxide MoO(3) on organic semiconductors. Eight organic hole transport materials have been used in this study. Ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy are...
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| Publicat a: | Sci Rep |
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| Autors principals: | , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4754744/ https://ncbi.nlm.nih.gov/pubmed/26880185 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep21109 |
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