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Easily doped p-type, low hole effective mass, transparent oxides

Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly transparent in the visible spectrum. Here, a high-throughput study bas...

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Библиографические подробности
Опубликовано в: :Sci Rep
Главные авторы: Sarmadian, Nasrin, Saniz, Rolando, Partoens, Bart, Lamoen, Dirk
Формат: Artigo
Язык:Inglês
Опубликовано: Nature Publishing Group 2016
Предметы:
Online-ссылка:https://ncbi.nlm.nih.gov/pmc/articles/PMC4745066/
https://ncbi.nlm.nih.gov/pubmed/26854336
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep20446
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