Resistance switching behavior of atomic layer deposited SrTiO(3) film through possible formation of Sr(2)Ti(6)O(13) or Sr(1)Ti(11)O(20) phases

Identification of microstructural evolution of nanoscale conducting phase, such as conducting filament (CF), in many resistance switching (RS) devices is a crucial factor to unambiguously understand the electrical behaviours of the RS-based electronic devices. Among the diverse RS material systems,...

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Publicado no:Sci Rep
Main Authors: Lee, Woongkyu, Yoo, Sijung, Yoon, Kyung Jean, Yeu, In Won, Chang, Hye Jung, Choi, Jung-Hae, Hoffmann-Eifert, Susanne, Waser, Rainer, Hwang, Cheol Seong
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2016
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4735854/
https://ncbi.nlm.nih.gov/pubmed/26830978
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep20550
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