Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, extremely low energy straintronic memory

We report reversible strain-induced magnetization switching between two stable/metastable states in ~300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one polarity applied across the substrate generates compressive strain in a nanomagnet and switches its magnet...

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Bibliographic Details
Published in:Sci Rep
Main Authors: Ahmad, Hasnain, Atulasimha, Jayasimha, Bandyopadhyay, Supriyo
Format: Artigo
Language:Inglês
Published: Nature Publishing Group 2015
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Article
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC4677403/
https://ncbi.nlm.nih.gov/pubmed/26657829
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep18264
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