Atomically precise semiconductor—graphene and hBN interfaces by Ge intercalation

The full exploration of the potential, which graphene offers to nanoelectronics requires its integration into semiconductor technology. So far the real-world applications are limited by the ability to concomitantly achieve large single-crystalline domains on dielectrics and semiconductors and to tai...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Verbitskiy, N. I., Fedorov, A. V., Profeta, G., Stroppa, A., Petaccia, L., Senkovskiy, B., Nefedov, A., Wöll, C., Usachov, D. Yu., Vyalikh, D. V., Yashina, L. V., Eliseev, A. A., Pichler, T., Grüneis, A.
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2015
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4671056/
https://ncbi.nlm.nih.gov/pubmed/26639608
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep17700
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