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Thickness-Induced Metal-Insulator Transition in Sb-doped SnO(2) Ultrathin Films: The Role of Quantum Confinement
A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO(2) (SnO(2):Sb) epitaxial ultrathin films deposited on [Image: see text] sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness f...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4663506/ https://ncbi.nlm.nih.gov/pubmed/26616286 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep17424 |
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