טוען...
Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal
In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H(2)-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crysta...
שמור ב:
| הוצא לאור ב: | Sci Rep |
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| Main Authors: | , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Publishing Group
2015
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4650756/ https://ncbi.nlm.nih.gov/pubmed/25994455 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep10426 |
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