Φορτώνει......
Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal
In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H(2)-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crysta...
Αποθηκεύτηκε σε:
| Τόπος έκδοσης: | Sci Rep |
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| Κύριοι συγγραφείς: | , , , , |
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
Nature Publishing Group
2015
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| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4650756/ https://ncbi.nlm.nih.gov/pubmed/25994455 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep10426 |
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