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Fabricating a high-resolution mask with improved line-edge roughness by using a nonchemically amplified resist and a postexposure bake

The authors have developed a high-resolution technique for fabricating photomasks at the 10-nm half-pitch logic nodes and beyond. Current mask-manufacturing techniques use a chemically amplified resist (CAR) that has a complex mechanism of acid generation, complicating the criteria for selecting the...

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Bibliografski detalji
Izdano u:J Vac Sci Technol B Nanotechnol Microelectron
Glavni autori: Miyoshi, Hidetatsu, Taniguchi, Jun
Format: Artigo
Jezik:Inglês
Izdano: American Vacuum Society 2015
Teme:
Online pristup:https://ncbi.nlm.nih.gov/pmc/articles/PMC4644150/
https://ncbi.nlm.nih.gov/pubmed/26594597
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1116/1.4935558
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