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Fabricating a high-resolution mask with improved line-edge roughness by using a nonchemically amplified resist and a postexposure bake
The authors have developed a high-resolution technique for fabricating photomasks at the 10-nm half-pitch logic nodes and beyond. Current mask-manufacturing techniques use a chemically amplified resist (CAR) that has a complex mechanism of acid generation, complicating the criteria for selecting the...
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| Publicado no: | J Vac Sci Technol B Nanotechnol Microelectron |
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| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Vacuum Society
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4644150/ https://ncbi.nlm.nih.gov/pubmed/26594597 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1116/1.4935558 |
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