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Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg(0.51)Zn(0.49)O active components
N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content Mg(x)Zn(1–x)O for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg(0.51)Zn(0.49)O active components, wh...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2015
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4614808/ https://ncbi.nlm.nih.gov/pubmed/26489958 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep15516 |
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