A carregar...

Interface designed MoS(2)/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride

MoS(2) is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS(2)/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS(2)/bulk semiconductor heterostructure, static charge transfer sh...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Lin, Shisheng, Li, Xiaoqiang, Wang, Peng, Xu, Zhijuan, Zhang, Shengjiao, Zhong, Huikai, Wu, Zhiqian, Xu, Wenli, Chen, Hongsheng
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2015
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4602223/
https://ncbi.nlm.nih.gov/pubmed/26458358
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep15103
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!