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Microscopic basis for the band engineering of Mo(1−x)W(x)S(2)-based heterojunction
Transition-metal dichalcogenide layered materials, consisting of a transition-metal atomic layer sandwiched by two chalcogen atomic layers, have been attracting considerable attention because of their desirable physical properties for semiconductor devices, and a wide variety of pn junctions, which...
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| Publicado en: | Sci Rep |
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| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4595798/ https://ncbi.nlm.nih.gov/pubmed/26443124 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep14808 |
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