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A double barrier memristive device
We present a quantum mechanical memristive Nb/Al/Al(2)O(3)/Nb(x)O(y)/Au device which consists of an ultra-thin memristive layer (Nb(x)O(y)) sandwiched between an Al(2)O(3) tunnel barrier and a Schottky-like contact. A highly uniform current distribution for the LRS (low resistance state) and HRS (hi...
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| Foilsithe in: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , |
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
Nature Publishing Group
2015
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| Ábhair: | |
| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4562229/ https://ncbi.nlm.nih.gov/pubmed/26348823 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep13753 |
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