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Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions

We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a mag...

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Bibliografske podrobnosti
izdano v:Sci Rep
Main Authors: Yang, D. Z., Wang, T., Sui, W. B., Si, M. S., Guo, D. W., Shi, Z., Wang, F. C., Xue, D. S.
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group 2015
Teme:
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC4555100/
https://ncbi.nlm.nih.gov/pubmed/26323495
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep11096
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