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Numerical simulation of ISFET structures for biosensing devices with TCAD tools
BACKGROUND: Ion Sensitive Field Effect Transistors (ISFETs) are one of the primitive structures for the fabrication of biosensors (BioFETs). Aiming at the optimization of the design and fabrication processes of BioFETs, the correlation between technological parameters and device electrical response...
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| Pubblicato in: | Biomed Eng Online |
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| Autori principali: | , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
BioMed Central
2015
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4547192/ https://ncbi.nlm.nih.gov/pubmed/26329255 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1475-925X-14-S2-S3 |
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