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Numerical simulation of ISFET structures for biosensing devices with TCAD tools
BACKGROUND: Ion Sensitive Field Effect Transistors (ISFETs) are one of the primitive structures for the fabrication of biosensors (BioFETs). Aiming at the optimization of the design and fabrication processes of BioFETs, the correlation between technological parameters and device electrical response...
Gorde:
| Argitaratua izan da: | Biomed Eng Online |
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| Egile Nagusiak: | , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
BioMed Central
2015
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4547192/ https://ncbi.nlm.nih.gov/pubmed/26329255 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1475-925X-14-S2-S3 |
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