Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, pro...

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Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:J Vis Exp
Prif Awduron: Rossi, Alessandro, Tanttu, Tuomo, Hudson, Fay E., Sun, Yuxin, Möttönen, Mikko, Dzurak, Andrew S.
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: MyJove Corporation 2015
Pynciau:
Engineering
Mynediad Ar-lein:https://ncbi.nlm.nih.gov/pmc/articles/PMC4544770/
https://ncbi.nlm.nih.gov/pubmed/26067215
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3791/52852
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