Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se(2) solar cells

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se(2) (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an inno...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Prog Photovolt
Main Authors: Vermang, Bart, Wätjen, Jörn Timo, Fjällström, Viktor, Rostvall, Fredrik, Edoff, Marika, Kotipalli, Ratan, Henry, Frederic, Flandre, Denis
Formato: Artigo
Idioma:Inglês
Publicado em: BlackWell Publishing Ltd 2014
Assuntos:
Accelerated Publications
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4540152/
https://ncbi.nlm.nih.gov/pubmed/26300619
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/pip.2527
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registos relacionados