Loading...
Fabrication of Straight Silicon Nanowires and Their Conductive Properties
Straight Si nanowires (Si NWs) with tens to hundreds of micrometers in length and 40–200 nm in diameter are achieved by annealing a Si substrate coated with metallic Fe. The influences of annealing gas and temperature on the formation of Si NWs are investigated. It is found that the annealing gas ha...
Na minha lista:
| Udgivet i: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer US
2015
|
| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4534481/ https://ncbi.nlm.nih.gov/pubmed/26269253 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-1025-x |
| Tags: |
Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!
|